Abstract
In order to evaluate accurately the thickness of SiO2 films on Si substrates, we applied a heat cleaning method in the atmosphere to remove adsorbates on the SiO2 surface using a hot plate. A high reproduciblity was obtained for the thicknesses of the sample just after heating. In addition, carbon-derived contaminants on the surface were markedly decreased by the heating. Since this method is extremely simple and requires no special equipment and chemicals, it has a potential to become an effective cleaning method for accurate thickness evaluation of SiO2 thin films on Si substrates.
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