Abstract
A quantum well (QW) transistor laser with the capability of high current density, a collector current ensuring minimal operational change (beyond laser threshold) in base QW carrier population, a favorable long narrow emitter laser geometry, and built-in base-collector Franz-Keldysh absorption (with IE+IB+IC=0), is measured for chirp-related behavior. A relatively low transistor laser linewidth enhancement factor αe∼0.7 is obtained despite the resolution limitations of the measurement apparatus.
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