Abstract
This paper presents a new chip-level simulation methodology for charged-device model (CDM) failure analysis in multi-power ICs. A circuit model considering reported CDM failures and efficient simulation is proposed and incorporated with the circuit-level ESD simulator, iETSIM. The CDM behaviors in multi-power ICs are analyzed and the vulnerable sites to CDM stress can be predicted by chip-level simulation. Simulation results are verified by CDM testing of a 0.25 /spl mu/m CMOS ASIC and show good correlation. This simulation methodology at the full-chip level enables us to address CDM failure issues before the detailed chip floorplan and power grid networking are started.
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