Abstract
The influence of chip temperature on the hydrogen sensitivity of the metal-insulator-semiconductor field-effect transistor (MISFET) with structure Pd-Ta2O5-SiO2-Si was investigated. MISFET sensing elements were fabricated on silicon chip together with (p–n)-junction temperature sensor and heater-resistor. There were measured the hydrogen responses of the MISFET threshold voltage at room and higher chip temperatures (up to 180°C). The threshold voltage as a function of hydrogen concentration was determined at different temperatures. The models of temperature sensitivity of the threshold voltage based on the experimental data approximations are presented in this work.
Published Version
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