Abstract
The influence of the hydrogen concentration and electric modes of measuring circuits on responses’ parameters of the hydrogen sensors based on metal-insulator-semiconductor field-effect transistor (MISFET) with structure Pd(Ag)-Ta2O5-SiO2-Si have been experimentally studied. MISFET-based sensing elements have been fabricated by means of conventional MOS-technology on single silicon chip together with (p–n)-junction temperature sensor and heater-resistor. The responses of MISFETs for different hydrogen concentrations and drain currents were measured. It was shown how the responses’ amplitude and time parameters depend on hydrogen concentrations and the measuring circuit’s electric modes. To interpret results there was developed the generalized model of MISFET’s responses for different hydrogen concentrations, parameters of which were calculated using experimental data. These models can be used for simulation and prediction performances of MISFET-based sensors and gas-analysis devices.
Published Version
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