Abstract
A chemical-state-resolved x-ray standing-wave analysis using the chemical shift in photoelectron spectra was performed for a GaAs(001) surface treated with a (${\mathrm{NH}}_{4}$${)}_{2}$${\mathrm{S}}_{\mathit{x}}$ solution. The sulfur atoms in the S-Ga chemical state on the surface are at the bridge site but are not highly ordered. The degree of ordering of the sulfur atoms in the S-Ga chemical state is improved, and randomly distributed sulfur atoms in the S-As and S-S chemical states disappear as a result of post annealing.
Published Version
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