Abstract
A Te-adsorbed GaAs(001)-$(2\ifmmode\times\else\texttimes\fi{}1)$ surface is studied by back-reflection x-ray standing-wave analysis, and average position of adsorbed Te atoms on GaAs(001) is found to be close to the As atomic site and bond with Ga atoms. Chemical-state-resolved x-ray standing-wave analysis using chemical shift in Te ${3d}_{5/2}$ core-level photoelectron spectra suggest that Te atoms in two different chemical states correspond to two different distributions. Te atoms in a lower binding-energy chemical state are found to be in higher atomic positions and to be less ordered, whereas those in a higher binding-energy chemical state are found to be in lower atomic position and are highly ordered.
Published Version
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