Abstract
The surface structure of GaSb(001) 4×2-In was investigated by core-level photoelectron spectroscopy (CLPES) using synchrotron radiation and X-ray standing-wave (XSW) analysis. From the CLPES measurement, we found that the 4×2 surface was mainly composed of single chemical bondings, which could be assigned to In–Sb bonding. This indicated that an In–Sb molecular layer terminated this 4×2 surface. In addition, the In atom position was analyzed by XSW using two different asymmetric (111) and (1-11) reflections. The coherent position values of 0.684 for (111) and 0.015 for (1-11) that were obtained indicated that the In atom position was higher than the top Sb atom position of Sb-double-layer. From these results, we propose a surface local bonding model for GaSb(001) 4×2-In, in which the Sb-double layer remains and In atoms terminate the surface.
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