Abstract
Creating oxide interfaces with precise chemical specificity at the atomic layer level is desired for the engineering of quantum phases and electronic applications, but highly challenging, owing partially to the lack of in situ tools to monitor the chemical composition and completeness of the surface layer during growth. Here we report the in situ observation of atomic layer-by-layer inner potential variations by analysing the Kikuchi lines during epitaxial growth of strontium titanate, providing a powerful real-time technique to monitor and control the chemical composition during growth. A model combining the effects of mean inner potential and step edge density (roughness) reveals the underlying mechanism of the complex and previously not well-understood reflection high-energy electron diffraction oscillations observed in the shuttered growth of oxide films. General rules are proposed to guide the synthesis of atomically and chemically sharp oxide interfaces, opening up vast opportunities for the exploration of intriguing quantum phenomena at oxide interfaces.
Highlights
Creating oxide interfaces with precise chemical specificity at the atomic layer level is desired for the engineering of quantum phases and electronic applications, but highly challenging, owing partially to the lack of in situ tools to monitor the chemical composition and completeness of the surface layer during growth
Understanding the origin of reflection high-energy electron diffraction (RHEED) oscillations and finding in situ tools for characterising the chemical composition and completeness of the surface layer are highly desired in order to synthesise atomically sharp oxide interface for intriguing quantum phases and electronic applications
We report the in situ measurements of the mean inner potential using Kikuchi lines and the observation of atomic layer-by-layer variations of the mean inner potential during the growth of SrTiO3, which provide information on the chemical composition of the film surface layer
Summary
Creating oxide interfaces with precise chemical specificity at the atomic layer level is desired for the engineering of quantum phases and electronic applications, but highly challenging, owing partially to the lack of in situ tools to monitor the chemical composition and completeness of the surface layer during growth. This cannot be explained by the step edge density model (Fig. 1b), since both SrO and TiO2 terminations are smooth All of these give rise to a fundamental question if one can rely on RHEED intensity oscillations to precisely control the growth of oxide interfaces. Since RHEED oscillations during the layer-by-layer growth of complex oxide films are complicated and sometimes controversial as reported in the literature[19,22,23,24,25], commonly accepted criteria for real-time control of the surface termination by RHEED is still lacking and it is very challenging to synthesize chemically sharp oxide interface. Understanding the origin of RHEED oscillations and finding in situ tools for characterising the chemical composition and completeness of the surface layer are highly desired in order to synthesise atomically sharp oxide interface for intriguing quantum phases and electronic applications.
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