Abstract
Binominal expressions for the reflection high-energy electron diffraction (RHEED) oscillations during the growth of thin films by molecular beam epitaxy (MBE) were investigated. The dependence of the RHEED oscillation shape on the molecular migration time and the oscillation period was analyzed quantitatively. The peaks and valleys in the calculated oscillation intensities as a function of the oscillation period were in qualitatively reasonable agreement with those obtained from the experimental data. These results can help in controlling the epitaxial film thickness in the growth of films by using the MBE technique.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
