Abstract
The physical properties of carbon materials can be altered by doping. For instance, the electronic properties of graphene can be modulated by controlling the substitutional doping of the carbon lattice with N. In addition, C–N bonding configurations with three ring types are recognized: pyridinic-N, pyrrolic-N, and graphitic-N. Controlling the type and relative density of various types of substitutional N is an important objective that requires an extremely high level of precision when the atomic lattice is constructed. This control can be accomplished only via bottom-up methods, such as chemical vapor deposition (CVD). The number of reports on N-doped graphene (NDG) grown via CVD has increased over the past decade, but a reliable wafer-scale production strategy that can realize the desired atomic-precision growth of NDG is still lacking. To identify the most promising strategies and analyze the consistency of the results published in the literature, we review the CVD growth and characterization of two-dimensional NDG and two of the most popular applications of NDG films: field-effect transistors and energy storage devices.
Highlights
INTRODUCTIONHybridized C atoms are densely packed into a benzene-ring structure. Graphene exhibits ultrahigh mobility (~200,000 cm[2] V−1 s−1)[1], broadband optical absorbance (2.3%) in the visible range, a large Young’s modulus of 1 TPa, high thermal conductivity at room temperature (~5000 W/mK)[2], and large surface area (2630 m2/g)[3]
Many recent studies have been performed on 3D networks of 2D-doped graphene flakes, npj 2D Materials and Applications (2022) 14
N-substituted graphene (N1, NAA2, NAB2, NAB’2,) N1V1, pyridinic-N3V1, pyrrolic-N3V1, pyridinic-N2V2, and pyridinic-N4V2 defects, where NxVy denotes a configuration with x N atoms and y vacancies in graphene
Summary
Hybridized C atoms are densely packed into a benzene-ring structure. Graphene exhibits ultrahigh mobility (~200,000 cm[2] V−1 s−1)[1], broadband optical absorbance (2.3%) in the visible range, a large Young’s modulus of 1 TPa, high thermal conductivity at room temperature (~5000 W/mK)[2], and large surface area (2630 m2/g)[3]. Halogen atoms (F, Cl, Br, and I) form ionic or covalent bonds with graphene, albeit with varying degrees of halogenation[31,36,37,39,40]. Both B and N, the neighboring elements of C on the periodic table, substitute C in the graphene lattice, resulting in p- and n-type doping, respectively[22,24,27]. Direct thermal annealing of graphene derivatives during N doping causes irreversible stacking of the graphene sheets due to strong π–π interactions To circumvent these problems, NDG can be grown using the chemical vapor deposition (CVD) process. To balance the costquality tradeoff of 2D NDG synthesis, the CVD method is more suitable than annealing[16], physical vapor deposition[61], pyrolysis[62,63], arc discharge[27,64,65], hydrothermal[61,66,67], and solvothermal[21,68,69] syntheses (Table 1)
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