Abstract
The method of disk rotating kinetics of dissolution processes CdTe, ZnxCd1-xTe and Cd0,2Hg0,8Te in yodvydilyayuchyh etching compositions HNO3-NO-lactate acid. The dependence of etching rate of said material concentration oxidizer and organic solvent. Optimized polishing compositions herbalists and modes chemical dynamic polishing of semiconductor materials studied. The influence of Zn and Hg content in the composition of solid solutions on the quality of the resulting surface etching mixtures.
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