Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Abstract

A charge trapping model is proposed considering the variations of carrier density ( $n_{s})$ in the channel and electric field $(F)$ in the gate insulator (GI) of amorphous-InGaZnO thin-film transistors (TFTs) during the gate bias stress. When the trapped electron charge amount in the GI is large enough, $n_{s}$ and $F$ decrease. These changes weaken the hopping conduction of trapped electrons in gate oxide, and hinder the electron injection into the insulator, and thus slow down TFT threshold voltage shift ( $\Delta V_{T})$ rate. The resulted $\Delta V_{T}$ model predicts accurately $V_{T}$ degradation under gate bias stress, especially when the TFTs experience a long time and/or high voltage of electrical stress.