Charge trapping in Si-implanted SiO2-Si memory devices athigh electric fields and elevated temperatures

Abstract

In the paper an influence of different electric fields and elevated temperatures oncharge trapping in Si nanoclusters enriched SiO2 is considered. It is shown that in the case ofthe voltage applied to virgin structure, independently on the applied voltage polarity, anincrease of the electric field and measurements temperature results in the appearance of similarcharging effect—positive charge generation in the dioxide. Careful analysis of the obtainedresults allows us to conclude that this positive charge generation on its first stage can beassociated with the electron field emission from the electrically neutral Si nanoclusters. Studyof the temperature dependence of charge relaxation connected with the electron emission fromSi nanoclusters allows us to determine a band gap (near 1.50 eV) and size (near 3.5 nm) of Sinanoclusters imbedded in the SiO2 by high-dose Si+ ion implantation.