Abstract
Normally-off GaN-MOSFETs with Al 2O 3 gate dielectric have been fabricated and characterized. The Al 2O 3 layer is deposited by ALD and annealed under various temperatures. The saturation drain current of 330 mA/mm and the maximum transconductance of 32 mS/mm in the saturation region are not significantly modified after annealing. The subthreshold slope and the low-field mobility value are improved from 642 to 347 mV/dec and from 50 to 55 cm 2 V −1 s −1, respectively. The I D– V G curve shows hysteresis due to oxide trapped charge in the Al 2O 3 before annealing. The amount of hysteresis reduces with the increase of annealing temperature up to 750 °C. The Al 2O 3 layer starts to crystallize at a temperature of 850 °C and its insulating property deteriorates.
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