Abstract
Interstitial Fe57m atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400–800 K as a result of the recoil imparted on these daughter atoms in the β− decay of ion-implanted, substitutional Mn57. Diffusional jumps of the interstitial Fe57m cause a line broadening in their Mössbauer spectra, which is directly proportional to their diffusivity. Thus, the charge-state-dependent diffusivity has been determined in differently doped material.
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