Abstract
ABSTRACTA one-dimensional charge control model based on the self-consistent numerical solution of the Schroedinger and Poisson equation has been developed for n- and p-channel quantum-well (QW) MOSFETs and MODFETs in the strained-layer SiGe heterostructure material system. Results are presented for prototype QW n-channel MODFET and MOSFET structures experimentally demonstrated in the literature. Side channel formation limits the maximum usable QW channel densities and voltage swings. The optimization of the charge control characteristics of the p-channel QW-MOSFET is achieved by maximizing the Ge content of the QW SiGe layer and minimizing the Si spacer thickness to the oxide. Channel densities on the order of 1×1013cm22 are feasible.
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