Charge carrier localization in InAs self-organized quantum dots

Abstract

We considered the problem of localization of electrons and holes taking for instance the pyramidal InAs quantum dots in GaAs. The problem of quantum mechanics was solved for the localizing potential taking into account the geometry, chemical composition and built-in fields of the mechanical stress and strain. We found that the strongest localization of both types of charge carriers can be achieved if the ratio of the pyramid height to its base is about 0.2. Keywords: quantum dots, elastic strain, charge carrier localization.