Abstract
The phonons emitted by photoexcited carriers in self-organised InAs quantum dots in GaAs have been studied using a time-resolved bolometric detection technique. Measurements of the temporal, excitation power and, for the first time, angular dependence of the phonon emission have been made. The results show that carrier relaxation in the dots takes place mainly by emission of sub-THz acoustic phonons. We suggest that the results can be explained by considering the energy relaxation of excitons instead of treating the electrons and holes separately.
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