Abstract
We report about developing high resistivity thin film resistors using titanium oxy-nitride. Titanium nitride films of different thicknesses ranging from 50 to 300 nm were deposited on SiO 2/Si substrates using the reactive magnetron sputtering method. After deposition, these films were annealed in the air ambient. The structural and electrical properties of the films were examined as a function of annealing temperature. The samples with various thicknesses show TiN(1 1 1) phase. The sheet resistance increases from 150 up to 420 Ω/□ when the film thickness decreases from 300 to 50 nm. Temperature coefficience of resistance (TCR) of the films significantly decreased with decreasing the film thickness. The TCR of 50-nm thick film is quite low, about 49 ppm/K.
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