Abstract
Vanadium oxide thin films of different thickness were deposited on P (100) silicon substrates with silicon nitride thin film layer by reactive DC magnetron sputtering method. The current-voltage (I-V) curves of the samples measured in dark environment and different intensity of light environments showed that photovoltaic effect happened when the films exposed on visible light environments. Square resistance (R s ) and temperature coefficient of square resistance (TCR s ) of vanadium oxide thin films were also tested in dark and light environment respectively, and the results demonstrated that the R s was reduced and TCR s was enhanced when vanadium oxide thin films are exposed on light. Such effects changes with the variation of thickness of vanadium oxide thin films.
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