Abstract
ABSTRACTWe have characterized MOCVD grown ZnS layers for thin film electroluminescence (TFEL) devices. Films with thicknesses ranged from several Å to 2 μm were studied by x-ray diffractometry (XRD), cross-sectional transmission electron microscopy (XTEM), high-resolution transmission electron microscopy (HRTEM), and ultraviolet-visible photospectrometry (UVS). From HRTEM micrographs, it was observed that ZnS films consist of a mixture of hexagonal and cubic phases. Correlation of UV absorption spectra with XRD analysis resulted in a method for quantitative determination of the cubic packing fraction of polymorphic ZnS films. The initial ZnS layer (< 1000 Å) deposited on BaTa2O6 had more hexagonal than cubic phase because of denser crystal defects. However, the fraction of cubic phase increased with the film thickness. In addition to film microstructures, the mean grain size, growth rate, film uniformity, and surface roughness of MOCVD grown ZnS thin films as functions of film thicknesses and substrate temperatures were also calibrated by XTEM results.
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