Epitaxial growth of ZnS:Mn/Y 2O 3/ZnS/Si(100) multilayer thin films

Abstract

In a ZnS:Mn thin film electroluminescent (TFEL) device, in order to improve the crystallinity of each layer of the double insulating TFEL device, methods of preparing multi-epitaxial layers on a Si(100) crystal have been developed. A Y 2O 3 film is very suitable as an insulating layer in a TFEL device. However, it has not been possible to grow this film epitaxially, when the Y 2O 3 is deposited on a Si substrate directly. To overcome this problem a ZnS film, with a very small misfit to Si (∼ 0.3%), was firstly grown epitaxially on the Si substrate at a substrate temperature of 250°C to act as a buffer layer. An epitaxial film of Y 2O 3 was then successfully grown by evaporating it onto the epitaxial ZnS film on the Si substrate at a substrate temperature of 600°C. Moreover, an epitaxial film of ZnS:Mn, which is the emitting layer in a TFEL device, was grown by depositing it on the epitaxial multilayer of Y 2O 3/ZnS on Si at a substrate temperature of 250°C.