Abstract
A multilayered and a double-layered BaTiO 3 thin film structure were applied to the preparation of ZnS:Mn thin film electroluminescent (TFEL) devices. From the characterization of the TFEL devices, it was confirmed that the multilayered BaTiO 3 thin film structure prepared by a new stacking method, i.e. deposition of an amorphous layer during continuous cooling of the substrate after the deposition of a polycrystalline layer at higher temperature, had very suitable electrical properties for the insulating layer of the TFEL device. The ZnS:Mn TFEL device using the multilayered BaTiO 3 thin film structure showed stable efficiency characteristics with operating time as well as a low turn-on voltage of ∼50 V and a high saturated brightness of ∼3000 cd m −2.
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