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Abstract
Tunnel oxide passivated contact (TOPCon) structures using highly doped n-type polycrystalline silicon were fabricated using facing target sputtering and ion implantation techniques for a SiH4-free fabrication process of high-efficiency silicon solar cells. We investigated the structural and electrical properties of the highly doped n-type poly-Si layers to optimize the ion implantation process. We also investigated the surface passivation quality of our TOPCon structure. An effective carrier lifetime of 2.01 ms and an implied open circuit voltage of 704 mV were obtained for our sample annealed at 950 °C. The sample also exhibits a low contact resistance of 3.22 × 10−3 Ω cm−2. Our results open the way for SiH4-free fabrication of silicon solar cells with a TOPCon structure.
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