Abstract
Ternary nitride thin films have found widespread use in recent years as a coating that offers superior performance either as an anti-diffusion barrier in semiconductor technology or as protection against corrosion and wear in fine metallurgy processes. Film performance has been seen to depend very strongly on structure and composition. The aim of this work was to establish well-defined correlations between the deposition parameters and characteristics of the films in order to provide a way to deposit films with predetermined usable features. In the present case titanium-aluminum nitride thin films were deposited by reactive sputtering using both the dc and the rf power sources. In fact, by varying the deposition conditions, films with different thicknesses, stoichiometries and crystalline structures were obtained. The analytical techniques used to perform such characterization were Rutherford backscattering spectrometry, nuclear reaction analysis ( 14N(p,γ) 15O and 27Al(p,γ) 28 Si resonant reactions) and X-ray diffraction. Ternary crystalline phases not detected previously at room temperature were observed here by X-ray diffraction.
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