Abstract
Copper Selenide thin films were grown by thermal evaporation method on glass substrate. The properties of the thin films were characterized by XRD, UV–Visible spectroscopy, SEM-EDS, and PL analysis. The uniformity and stoichiometry of the deposited films were confirmed by SEM-EDS analysis. The XRD results confirmed the cubic phase with prominent (111) orientation. The deposited films showed very low transmittance (∼20%) and direct band gap of about 2.35 eV. Further, PL spectra revealed the presence of defect states present in the films. The deposited films are p-type material with carrier density of 1.14 × 1016 cm−3. Structural, spectroscopic, and electrical studies have confirmed the device quality of the grown films, which find potential application in the field of renewable energy.
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