Abstract
This paper reports high-temperature (305–523 K) electrical studies of chemical bath deposited copper (I) selenide (Cu 2− x Se) and copper (II) selenide (Cu 3Se 2) thin films. Cu 2− x Se and Cu 3Se 2 have been prepared on glass substrates from the same chemical bath at room temperature by controlling the pH. From X-ray diffraction (XRD) profiles, it has been found that Cu 2− x Se and Cu 3Se 2 have cubic and tetragonal structures, respectively. The composition of the chemical constituent in the films has been confirmed from XRD data and energy-dispersive X-ray analysis (EDAX). It has been found that both phases of copper selenide thin films have thermally activated conduction in the high-temperature range. In this paper we also report the variation of electrical parameters with film thickness and the applied voltage.
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