Abstract
We report the growth of high quality GaAs and AlGaAs carbon doping superlattice homostructures using trimethyl-Ga, triethyl-Ga and trimethylamine alane by chemical beam epitaxy. The periodic change in lattice parameter resulting from the change in carbon doping level is useful for the structural characterization of these samples by double crystal X-ray diffraction. With minimal contribution to the X-ray scattering intensity due to atomic form factors of the chemical modulation, the satellite intensities of the GaAs/GaAs : C superlattice are found to scale with order index as n −4, which conforms to a square waveform of strain modulation. Analysis of the intensity reduction of the annealed GaAs sample yields unambiguous information about the carbon diffusion in GaAs.
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