Abstract
The growth of InAlP and related compounds such as InGaP lattice matched to GaAs has attracted a great deal of interest for optoelectronic devices emitting in the range from 638 to 700 nm and for electronic devices such as the heterojunction bipolar transistor. Although some gas source MBE work has been performed in this material system, very little CBE work has been done, largely attributable to the lack of a suitable aluminum source. This is the first report of trimethyl amine alane (TMAA) being used to grow InAlP. TMAA offers advantages of less carbon incorporation and less oxygen sensitivity compared to triethyl aluminum, tri-isobutyl aluminum, or trimethyl aluminum. Trimethyl amine alane has been used to grow AlGaAs HBTs and more recently to grow InAlAs/InGaAs HEMTs by CBE. One of the principal strengths of CBE is its ability to handle phosphorus based compounds efficiently, offering excellent interface control. InAlP films with carbon concentrations below 7×10 17 cm -3 lattice matched |δa a|<2×10 -3 with good surface morphology have been grown. Double crystal X-ray diffraction exhibits a single epi-peak with a full width at half max of 46 arc sec with multiple Pendellösung fringes. The epitaxial films are semi-insulating, completely depleted for thicknesses up to 1.6 μm. Oxygen levels measured by secondary ion mass spectroscopy are comparable to levels measured in InAlAs films (∼2.5×10 18 cm -3) lattice matched to InP. The likely source of this oxygen is the hydride precursor as has been shown for the growth of InAlAs. As the substrate temperature is raised, the films become increasingly indium-rich. Breaking the growth rate down into its constituent binaries indicates an enhanced TMI incorporation rate. The quality of the films as measured by X-ray full width at half max and the surface morphology is extremely sensitive to substrate temperature. A very narrow window exists for the growth of good quality material in the range from 535 to 545°C.
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