Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation

Abstract

In the present letter electron diffraction contrast imaging (EDCI) computations for strain characterization on the nanometer scale are presented. Using newly developed simulation software for EDCI image interpretation it is demonstrated how the technique can be used in the characterization, with submicron resolution, of localized strain fields in any crystalline material. Strain fields of arbitrary geometrical symmetry can be treated. As a case study, localized strain in an advanced semiconductor laser structure is investigated.