Abstract
The sol-gel method produces amorphous or crystalline thin gel films of metallic solid compounds by solidifying a sol formed by hydrolyzing and polymerizing a solution containing metallic compounds. Sol-gel processes are widely employed in the field of chemistry to prepare ceramic powders and thin films of hafnium oxide (HfO2) (Nishide et al., 2000) and zirconium oxide (ZrO2) ( Liu et al., 2002) for obtaining high-quality ceramics and insulators, offering the advantages of low cost, relative simplicity, and easy control of the composition of the layers formed. This chapter describes the characterization of sol-gelderived and crystallized HfO2 and ZrO2 thin films intended for use as gate insulators with high dielectric constants in electronic devices.
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