Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications

Abstract

Fluorite structured HfO2 or ZrO2 thin films have been intensively studied for memory- and energy-related applications since their ferroelectricity was first reported in 2011. The phase transition between the nonpolar tetragonal and the polar orthorhombic phase in these new ferroelectric materials is believed to be promising for energy harvesting, energy storage and solid state cooling. The temperature dependent phase transition and resulting strong pyroelectric and electrocaloric effect have been reported for Si-doped HfO2 and (Hf,Zr)O2 thin films. In this study, the effect of acceptor (Al and Gd) doping into HfO2 thin films on their temperature dependent phase transition was systematically examined. The phase transitions in Al- and Gd-doped HfO2 thin films were much broader compared to Si-doped HfO2 and (Hf,Zr)O2 films. The maximum adiabatic temperature change (ΔT) values of Al- and Gd-doped HfO2 film were 5.7 and 3.1K, respectively. A giant negative electrocaloric effect with ΔT of −7.4K could be observed for Al-doped HfO2. The various factors which can potentially affect the phase transitions of HfO2 films, such as dopant size, grain size distribution, spatial dopant distribution, and oxygen vacancy distribution were carefully examined to understand the different phase transition behavior. From the various factors, the distribution of oxygen vacancies is suggested as the origin of the different phase transitions of HfO2 films doped with trivalent and tetravalent dopants.