Abstract
AbstractThe retention phenomena of purposely aligned micron-size domains (defined as “bits”) in Pb(Zr,Ti)O3 thin films were characterized by atomic force microscopy (AFM) combined with a lock-in amplifier. It is found that the retention loss occurs by “region by region” showing local variation of the rate of the loss. Furthermore, the total retention loss can be successfully described by an extended exponential decay, which implies a narrow distribution of the relaxation times of the domains. This probably comes from the fact that the micron-size bits consist a few hundreds of domains. Along with the characterization, the effects of the bit size and the poling time per unit area on the retention characteristics were investigated. Based on our observations, it is concluded that the retention time is proportional to both the poling time per unit area and the bit size. This trend is successfully explained by a kinetic model developed by our group.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
