Abstract
Al incorporation into the InGaN films has been successfully attained from the cermet targets under the working temperature of 200 °C and output power of 120 W by the RF sputtering technique. We used energy dispersive spectroscopy to analyze the compositions of the AlxInyGa1−x−yN, and X-ray diffractometry and atomic force microscopy had been taken to obtain the crystal structure and growth characteristics of the AlInGaN films. Composition-affected electrical properties of the films had been discussed by the Hall measurement, which also identified the incorporation of Al into the InGaN film in this work. A simple n-AlInGaN/p-Si diode is designed to illustrate the potential application of the sputtered AlInGaN in an electrical device.
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