Abstract
The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.
Highlights
GaN and InGaN have excellent characteristics such as high conductivity and high mobility.The development and creation of p–layer GaN and InGaN materials involve one of the important technologies in designing electronic devices [1,2,3,4,5]
Si wafer has often been used for the growth of GaN, InGaN, and their alloys for applications in photo-detector, solar cells, and electronic devices
Wagner et al reported the composition dependence of the band gap energy of the strained Inx Ga1−x N layers grown by MOCVD
Summary
GaN and InGaN have excellent characteristics such as high conductivity and high mobility. Si wafer has often been used for the growth of GaN, InGaN, and their alloys for applications in photo-detector, solar cells, and electronic devices. The growth of the InGaN layer on n–Si wafers were studied to improve the interface layers by Coatings 2019, 9, 699; doi:10.3390/coatings9110699 www.mdpi.com/journal/coatings. There is no report on the electrical properties of p–Mgp–Mg-In. 1−x N/n–Si doping in the p–GaN the p–InGaN the modeling of p–Mg-In junction x Ga1−x N/n–Si in the p–GaN and theand p–InGaN films, films, the modeling of p–Mg-In xGa1−xN/n–Si hetero hetero junction diodes diodes was designed by using the. 1−x N/n–Si doping in the p–GaN the p–InGaN the modeling of p–Mg-In junction x Ga1−x N/n–Si in the p–GaN and theand p–InGaN films, films, the modeling of p–Mg-In xGa1−xN/n–Si hetero hetero junction diodes diodes was designed by using the This method was chosen to design diodes was designed by using the RF reactive sputtering. Mode at electrical characteristics of devices were calculated by the thermionic emission (TE) mode at different different testing temperatures testing temperatures [3,12,13].[3,12,13]
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