Abstract
High quality In x Ga 1− x N films with x values up to 0.3 were grown by low pressure MOCVD. It was found that x values in In x Ga 1− x N films near exponentially decrease with growth temperature. The doping characteristics of InGaN films with Si and Zn were studied. At optimum growth conditions, the PL intensity of Zn doped InGaN film is about 30 times stronger than that of undoped InGaN film. The PL intensity of Si-doped InGaN film is strong as 13 times as that of undoped InGaN film.
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