Characterization of POCl<sub>3</sub>-Annealed 4H-Sic Mosfets by Charge Pumping Technique

Abstract

4H-SiC MOSFETs were characterized using charge pumping (CP) technique to monitor interface state density (Dit) not only in the upper half of the bandgap (Eg) but also in the lower half of Eg. Comparison between POCl3- and NO-annealed MOSFETs was made using CP technique to reveal the different interface properties. The CP measurements of MOSFETs revealed that POCl3 annealing can reduce Dit near Ec, whereas it increases donor-like Dit in the lower half of Eg.