Charge Pumping Technique

Abstract

This chapter demonstrates that the charge pumping (CP) technique can be used to characterize two interfaces of the SOI layer when the SOI MOSFET has a body contact. Since the body contact and the source and drain junctions form pn junctions with the MOS gate, the charge pumping technique for the SOI MOSFET is related to SOI Lubistor operation. It is easily anticipated that the impact of Lubistor operation on the charge pumping phenomenon is most critical when the SOI layer thickness is less than 10 nm because the energy levels of the SOI layer are definitely quantized. This is one of the challenging research issues with the charge pumping technique. In the following, we examine how to apply the charge pumping technique to the characterization of the two interfaces of an SOI MOSFET with a thick SOI layer.