Abstract
AbstractMesa‐shape InGaN/GaN light emitting diodes (LED) with V‐shaped periodic deflectors were fabricated by using selective metal organic chemical vapour deposition (MOCVD). Use of SiO2 dot pattern inside LED structure can be partially contributed to a flat surface without any edge growth effects, which usually occurred at window edge regions after selective MOCVD growth. Therefore this technique promises to eliminate dry etching process by means of mesa pattern and also enhance the light output extraction efficiency. Our results indicated that the light output intensity was significantly increased as compared to that of a conventional‐LED due to the effect of periodic deflectors on facilitating the multiple chances of photons to escape. Smaller value of ideality factor for periodic deflector light emitting diode (PD‐LED) revealed difference in carrier confinement mechanism in region II of forward bias voltage analysis, while the forward bias voltage behavior in other regions was compatible with those of conventional‐LED. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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