Abstract
A GaAs/AlGaAs surface-emitting light-emitting diode (LED) and a vertical field-effect transistor (FET) are vertically integrated using the selective atmospheric pressure metalorganic chemical vapor deposition (MOCVD) technique. The embedded Schottky metal between the epitaxial GaAs layers is employed as the gate electrode of the vertical driver FET. As the drain current of FET flows through the LED, the light output of LED is effectively controlled by the gate voltage of the driver FET. This device operates as a three-terminal optoelectronic device controlled by an electric input.
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