Abstract
Selective metal organic chemical vapor deposition (MOCVD)-grown mesa-shaped InGaN/GaN light-emitting diode (LED) with V-shaped periodic deflectors was fabricated. MOCVD eliminates dry etching and also enhances of light output extraction efficiency. Our results indicate that the light output intensity of the fabricated LED was 20% higher than that of conventional LED due to the effect of periodic deflectors on facilitating the multiple chances of photons to escape, whereas the forward bias voltage was compatible with those of conventional LEDs.
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