Abstract
We investigated tunnel recombination junction (TRJ) structures using p-type nitrogen-doped cuprous oxide (Cu2O:N) and n-type silicon-based thin films for perovskite/heterojunction crystalline silicon monolithic tandem solar cells. The TRJ structure using n-type hydrogenated amorphous silicon showed non-ohmic behavior. On the other hand, the TRJ structure using n-type hydrogenated microcrystalline silicon (µc-Si:H) showed ohmic behavior with sufficiently low contact resistance. This indicates that the p-type Cu2O:N/n-type µc-Si:H junction is promising for the TRJ in perovskite/heterojunction crystalline silicon monolithic tandem solar cells.
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