Abstract
A novel tunnel recombination junction (TRJ) consisted of n type hydrogenated microcrystalline silicon oxide (n-μc-SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> :H) layer and p type hydrogenated nanocrystalline silicon oxide (p-nc-SiOx:H) layer was proposed in hydrogenated amorphous silicon/microcrystalline silicon (a-Si:H/μc-Si:H) tandem solar cell. The absence of n-μc-Si:H compared to conventional n-μc-SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> :H/n-μc-Si:H/p-nc-SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> :H TRJ reduced parasitic absorption. Meanwhile, the new TRJ indicated an ohmic contact, which is suitable for the tandem solar cell. The application of the new TRJ significantly improved the short-circuit current (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</sub> ) of bottom cell. Moreover, n-μc-SiOx:H layer functioned as intermediate reflector layer to ensure high J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</sub> of top cell. Initial conversion efficiency of optimized a-Si:H/μc-Si:H tandem solar cell with novel TRJ based on as-grown MOCVDZnO: B (BZO) substrate reached up to 12.99%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
