Abstract
The Nb-doped Bi4Ti3O12 (BTN) thin films were fabricated on the Pt(111)/Ti/SiO2/Si substrate by the sol-gel method, and they were annealed by conventional furnace and two type of rapid thermal annealing (RTA) methods. The thin films were grown to be poly-crystallized with 280nm thickness. The remanent polarization and coercive field of the BTN thin films were about 9 ∼ 12μC/cm2 and 140 ∼ 160kV/cm, respectively. The band gaps of the film were measured by the ellipsometeric spectroscopy and the photon energy dependence of photocurrent were 3.38eV and 3.3 leV, respectively.
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