Characterization of n-type Cu2O deposited by reactive ion beam sputter deposition

Abstract

Cuprous oxide (Cu2O) has been successfully deposited by reactive ion beam sputter deposition at 450 °C with various oxygen flow rates. At high oxygen flow rates, single phase polycrystalline Cu2O thin film was attained while low oxygen flow rates results in the formation of Cu2O nanorods. X-ray diffraction, Raman, and x-ray photoelectron spectroscopy analyses indicate that both samples are composed of Cu2O phase only without the presence of CuO while samples deposited with low oxygen flow rates exhibit improved crystalline quality. Photocurrent measurement result indicates that Cu2O samples prepared under low oxygen flow rate are of n-type. Photoluminescence study suggests that this n-type conductivity is due to the presence of intrinsic oxygen vacancy defects.