Abstract
The influence of sputtering and annealing on the properties of MoSe 2 films was investigated by scanning electron microscopy, electron microprobe analysis, X-ray photoelectron spectroscopy (XPS), X-ray analysis, optical absorption and electrical resistivity measurements. It was found that stoichiometric thin films are obtained after appropriate annealing. The c axis orientation depends strongly on the thin film composition before annealing. The crystallite size varies between 10 and 200 nm. The optical gaps were determined to be almost equal to that of MoSe 2 single crystals. The chemical shifts of the XPS lines were found to be in good agreement with those of a stoichiometric powder reference.
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