Characterization of MONOS nonvolatile memory by solid phase crystallization on glass

Abstract

Solid phase crystallization (SPC) is carried out because of the best uniformity among the various crystallization methods. SPC poly-Si nonvolatile memory (NVM) is expected superior memory property in terms of stable reliability. This paper presents electrical properties of SPC poly-Si NVM on glass.Nonvolatile memory is an ideal portable storage device due to its characteristics of low-power consumption and compact size. Metal/oxide/nitride/oxide/silicon (MONOS) structure memory was fabricated on glass. Silicon oxynitride (SiOxNy) layer grown by nitrous oxide plasma served as a carrier tunnel layer, silicon nitride (SiNx) as charge trap region and silicon dioxide (SiO2) for blocking oxide were deposited to fabricate NVM on SPC poly-Si. SiOxNy, SiNx, and SiO2 films were deposited by using inductively coupled plasma chemical vapor deposition (ICP-CVD). Electrical properties of NVM on glass were analyzed gate voltage–drain current (VG–ID) and charge retention property. We obtained the NVM device with the programming voltage of −12 V, erasing of 11 V, and fast programming/erasing (P/E) time of 1 ms. It has a threshold voltage window memory of about 3.7 V and it still keep a wide threshold voltage window of 2.3 V after 10 years.