Abstract
We have fabricated nanocrystalline Si (nc-Si) TFTs at 150°C using inductively coupled plasma chemical vapor deposition (ICP-CVD). A nc-Si film with large grains exceeding 300A and a SiO2 film with high breakdown field were deposited by ICP-CVD. A high mobility of 7.1cm2/Vs with a low sub-threshold swing of 0.33V/dec was obtained.
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