SiO2 Insulator Film Synthesized at 100 °C Using Tetramethylsilane by Inductively Coupled Plasma Chemical Vapor Deposition

Abstract

SiO2 insulator films were deposited at the substrate temperature of 100 °C by the inductively coupled plasma chemical vapor deposition (ICP-CVD) method using an organic silicon source of tetramethylsilane (4MS) and a N2O precursor. Fourier transform infrared (FT-IR) absorption peaks of O–H stretch, Si–H stretch, and Si–CH3 stretch were not observed in these SiO2 films. The refractive index of SiO2 films at 100 °C was 1.480. These results indicate that typical SiO2 films can be obtained by ICP-CVD using 4MS and N2O by increasing the substrate temperature to 100 °C. Leakage currents of 1.6 nA/cm2 and 1 µA/cm2 at breakdown voltage of 1 and 7 MV/cm, respectively, were achieved.